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首页> 外文期刊>Physical review. B, Condensed Matter And Materials Physics >Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO
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Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO

机译:温度对半导体中激子带隙的同位素质量依赖性的影响:ZnO

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摘要

The temperature dependence of the A, B, and C excitons of ZnO, observed in modulated reflectivity spectra of ~(68)Zn ~(18)O and ~(nat)Zn ~(nat)O in the range 10-400 K, reveal the superposition of band-gap renormalization originating in electron-phonon interaction and volume changes associated with thermal expansion and (or) isotopic composition in combination with anharmonicity. At low temperatures, the A, B, and C excitons in natural ZnO reach limiting values depressed from their values for the infinitely massive isotopes (the latter are free from electron-phonon interaction and anharmonicity). The C excitons of ~(68)Zn ~(18)O and ~(nat)Zn ~(nat)O converge with increasing temperature, demonstrating the independence of the band gap from isotopic mass at high temperatures.
机译:在〜(68)Zn〜(18)O和〜(nat)Zn〜(nat)O在10-400 K范围内的调制反射光谱中观察到的ZnO的A,B和C激子的温度依赖性,揭示了由于电子-声子相互作用和与热膨胀和(或)同位素组成以及非谐性相关的体积变化而引起的带隙重整化的叠加。在低温下,天然ZnO中的A,B和C激子达到极限值,该极限值因其无限大的同位素值而降低(后者没有电子-声子相互作用和非谐性)。 〜(68)Zn〜(18)O和〜(nat)Zn〜(nat)O的C激子随着温度的升高而会聚,这表明高温下带隙与同位素质量无关。

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