Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations

P. D. C. King; T. D. Veal; C. F. McConville; F. Fuchs; J. Furthmueller; F. Bechstedt; J. Schoermann D. J. As; K. Lischka; Hai Lu; W. J. Schaff

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Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations

机译：X射线光电子能谱和第一性原理计算得出的闪锌矿和纤锌矿InN的价态带密度

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The valence band density of states (VB-DOS) of zinc-blende InN(001) is investigated using a combination of high-resolution x-ray photoemission spectroscopy and quasiparticle corrected density functional theory. The zinc-blende VB-DOS can be characterized

机译：结合高分辨率X射线光电子能谱和准粒子校正的密度泛函理论，研究了闪锌矿InN（001）的价态价态密度（VB-DOS）。闪锌矿VB-DOS的特性

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《Physical review》 |2008年第11期|631-637|共7页
作者
P. D. C. King; T. D. Veal; C. F. McConville; F. Fuchs; J. Furthmueller; F. Bechstedt; J. Schoermann D. J. As; K. Lischka; Hai Lu; W. J. Schaff;
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semiconductor compounds; photoemission and photoelectron spectra; density functional theory; local density approximation; gradient and other corrections;

机译：半导体化合物光发射和光电子光谱;密度泛函理论;局部密度近似;渐变和其他校正;

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1. Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations [J] . P. D. C. King, T. D. Veal, A. Schleife, Physical review . 2009,第20期

机译：X射线光电子能谱和准粒子校正的密度泛函理论计算的CdO，ZnO和MgO的价带电子结构
2. Valence Band Density of States of Cu_3Si Studied by Soft X-Ray Emission Spectroscopy and a First-Principle Molecular Orbital Calculation [J] . Zhenlian An, Chihiro Kamezawa, Masaaki Hirai, Journal of the Physical Society of Japan . 2002,第12期

机译：软X射线发射光谱和第一性原理分子轨道计算研究Cu_3Si态价带密度
3. Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy [J] . Riqing Zhang, Panfeng Zhang, Tingting Kang, Applied Physics Letters . 2007,第16期

机译：X射线光电子能谱法测定纤锌矿InN / ZnO异质结的价带偏移
4. VALENCE BAND PARAMETERS FOR WURTZITE GaN and InN [C] . Symposium on nitride semiconductors . 1998

机译：维特塔特甘套房的价频段参数
5. Band-structure calculations for one- and two-dimensional defects in zinc-blende III-V nitrides. [D] . Pentaleri, E. A. 1996

机译：闪锌矿III-V氮化物中一维和二维缺陷的能带结构计算。
6. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy [O] . Zhiwei Li, Biao Zhang, Jun Wang, 2011

机译：X射线光电子能谱法测量纤锌矿InN / SrTiO3异质结的价带偏移
7. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy [O] . Zhiwei Li, Biao Zhang, Jun Wang, 2011

机译：X射线光电子能谱法测量纤锌矿InN / SrTiO3异质结的价带偏移
8. Relaxation and Cross Section Effects in Valence Band Photoemission Spectroscopy. [R] . mcfeely, f. r. 1977

机译：价带光电子能谱中的弛豫和截面效应。

Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations

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