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Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts

机译:量子点接触的弹道电导中0.5平台的可能起源

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A nonequilibrium Green's function formalism is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of the lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In the single-electron modeling of transport, this triggers a spontaneous but insignificant spin polarization in the QPC. However, the spin polarization of the QPC is enhanced substantially when the effect of electron-electron interaction is included. The spin polarization is strong enough to result in the occurrence of a conductance plateau at 0.5G_0 (G_0=2e~2/h) in the absence of any external magnetic field. In our simulations of a model QPC device, the 0.5 plateau is found to be quite robust and survives up to a temperature of 40 K. The spontaneous spin polarization and the resulting magnetization of the QPC can be reversed by flipping the polarity of the source to drain bias or the potential difference between the two SGs. These numerical simulations are in good agreement with recent experimental results for side-gated QPCs made from the low band-gap semiconductor InAs.
机译:使用非平衡格林函数形式来研究在存在侧向自旋轨道耦合(LSOC)的情况下,侧门量子点接触(QPC)的电导。两侧栅极(SGs)之间偏置电压的微小差异会导致沟道相对边缘之间的LSOC中的反转不对称。在传输的单电子模型中,这会触发QPC中的自发但微不足道的自旋极化。然而,当包括电子-电子相互作用的影响时,QPC的自旋极化显着增强。自旋极化强度足以导致在没有任何外部磁场的情况下在0.5G_0(G_0 = 2e〜2 / h)处出现电导平稳期。在我们对模型QPC器件的仿真中,发现0.5平稳区非常鲁棒,并且可以在40 K的温度下生存。通过将源极的极性翻转到50°C,可以反转自发自旋极化和由此产生的QPC磁化强度。漏极偏置或两个SG之间的电势差。这些数值模拟与由低带隙半导体InAs制成的侧面门控QPC的最新实验结果非常吻合。

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