机译:量子点接触的弹道电导中0.5平台的可能起源
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030, USA;
Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030, USA;
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0030, USA;
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0030, USA;
ballistic transport; electrical injection of spin polarized carriers; spin polarized transport in semiconductors; general formulation of transport theory;
机译:在存在横向旋转轨道耦合的情况下,0.5Ω×××(2e2 / h)电导平台的宽度依赖性
机译:0.5×(2E〜2 / h)电导平台对与平面侧门的纵横比的纵横比的依赖性
机译:量子点接触中异常的0.5和0.7电导平台
机译:GaAs量子点接触中平台电导的理想量化的温度相关偏差
机译:由于声子控制紊乱导致的量子点接触的非线性差分电导。
机译:在存在侧旋自旋轨道耦合的情况下InAs量子点接触中0.5×(2e2 / h)电导平台的宽度依赖性
机译:量子点接触的弹道电导中0.5平台的可能起源
机译:量子弹道和绝热电子传输,量子点接触研究