Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry

摘要

The mechanisms of particle emission resulting from electron-beam-induced etching of Si surfaces have been studied. A detailed analysis of the obtained mass spectra and kinetic-energy distributions shows that SiF_x (x =0-2) species are predominantly desorbed from the surface when exposed to XeF_2 etching gas and the electron beam. Based on these observations, we demonstrate a unique concept for materials analysis, termed zero-energy secondary-ion mass spectrometry, which can provide very high depth resolution and accurate near-surface profiles.