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Efficient low-order scaling method for large-scale electronic structure calculations with localized basis functions

机译:具有局部基函数的大规模电子结构计算的有效低阶缩放方法

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摘要

An efficient low-order scaling method is presented for large-scale electronic structure calculations based on the density-functional theory using localized basis functions, which directly computes selected elements of the density matrix by a contour integration of the Green's function evaluated with a nested dissection approach for resultant sparse matrices. The computational effort of the method scales as O[N(log_2 N)~2], O(N~2), and O(N~(7/3)) for one-, two-, and three-dimensional systems, respectively, where N is the number of basis functions. Unlike O(N) methods developed so far the approach is a numerically exact alternative to conventional O(N~3) diago-nalization schemes in spite of the low-order scaling, and can be applicble to not only insulating but also metallic systems in a single framework. It is also demonstrated that the well separated data structure is suitable for the massively parallel computation, which enables us to extend the applicability of density-functional calculations for large-scale systems together with the low-order scaling.
机译:提出了一种有效的低阶缩放方法,该方法用于基于电子密度函数理论的局部基函数的大规模电子结构计算,该方法通过使用嵌套解剖法评估的格林函数的轮廓积分来直接计算密度矩阵的选定元素结果稀疏矩阵的方法。对于一维,二维和三维系统,该方法的计算工作量缩放为O [N(log_2 N)〜2],O(N〜2)和O(N〜(7/3)),其中N是基函数的数量。与目前为止开发的O(N)方法不同,该方法在数值上是常规O(N〜3)诊断方案的精确替代方案,尽管缩放比例很低,并且不仅适用于绝缘系统,而且适用于金属系统。一个单一的框架。还证明了分离良好的数据结构适用于大规模并行计算,这使我们能够扩展密度泛函计算在大规模系统和低阶缩放中的适用性。

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