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首页> 外文期刊>Physical review >Interface structure of half-metallic Heusler alloy Co_2MnSi thin films facing an MgO tunnel barrier determined by x-ray magnetic circular dichroism
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Interface structure of half-metallic Heusler alloy Co_2MnSi thin films facing an MgO tunnel barrier determined by x-ray magnetic circular dichroism

机译:X射线磁圆二色性确定的面向MgO隧道势垒的半金属Heusler合金Co_2MnSi薄膜的界面结构

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摘要

Using x-ray absorption spectroscopy and x-ray magnetic circular dichroism, we performed an element-specific investigation of the spin magnetic moments (m_(spin)) of Mn and Co of Co_2MnSi ultrathin layers grown on an Fe underlayer to stabilize the ferromagnetism and facing an MgO barrier. The experimentally observed dependence of the m_(spin) values of Co and Mn on the Co_2MnSi layer thickness in the ultrathin region is qualitatively in good agreement with the one theoretically obtained for a MnSi-terminated interface of the Co_2MnSi layer facing an MgO barrier. This clarification would provide a strong basis for further advancement of applications of half-metallic Heusler alloy electrodes into spintronic devices.
机译:使用x射线吸收光谱法和x射线磁性圆二色性,我们对在Fe底层上生长的Co_2MnSi超薄层中的Mn和Co的自旋磁矩(m_(spin))进行了元素特定的研究,以稳定铁磁性和面对氧化镁屏障。在实验上观察到的Co和Mn的m_(spin)值对超薄区域中Co_2MnSi层厚度的依赖性与从理论上获得的Co_2MnSi层面向MgO势垒的MnSi终止界面的理论上的一致性。该澄清将为进一步将半金属赫斯勒合金电极应用到自旋电子器件中提供坚实的基础。

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