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首页> 外文期刊>Physical review >Effect of electron-hole inhomogeneity on specular Andreev reflection and Andreev retroreflection in a graphene-superconductor hybrid system
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Effect of electron-hole inhomogeneity on specular Andreev reflection and Andreev retroreflection in a graphene-superconductor hybrid system

机译:石墨烯-超导体混合体系中电子-空穴不均匀性对镜面Andreev反射和Andreev回射的影响

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The electron-hole inhomogeneity in graphene has been confirmed to be a new type of charge disorder by recent experiments, and the largest energy displacement of electron and hole puddles with respect to the Dirac point can reach nearly 30 meV. Here we focus on how the electron-hole inhomogeneity affects the specular Andreev reflection as well as the Andreev retroreflection. In a four-terminal graphene-superconductor hybrid system, we find that the Andreev coefficients can hardly be affected even under a rather large electron-hole inhomogeneity (typically 30 meV), and the boundary distinguishing two Andreev reflections can well hold, although the strength of the charge puddles, W = 30 meV, is much larger than the superconductor gap, A = 1 meV. Furthermore, when charge puddles are two orders of magnitude larger than the superconductor gap, a specific kind of Andreev reflection can still be obviously detected. To quantitatively describe what degree of the boundary is blurred, a quantity D is introduced which measures the width of a crossover region between specular Andreev reflection and retroreflection in energy space. We confirm that the boundary blurring is much smaller than the charge puddle strength W. In addition, we study the effect of Anderson disorder for comparison, and we find that the boundary is held much more obviously in this case. Finally, the fluctuations of the Andreev reflection coefficient are studied. Under a typical experimental charge puddle, the fluctuations are very small when the energy of the particles is away from the boundary, again confirming that the retroreflection and specular reflection can be clearly distinguished and detected in the presence of the electron-hole inhomogeneity.
机译:最近的实验已证实石墨烯中的电子-空穴不均匀性是一种新型的电荷无​​序,相对于狄拉克点,电子和空穴坑的最大能量位移可达到近30 meV。在这里,我们集中讨论电子空穴的不均匀性如何影响镜面的安德列夫反射以及安德列夫逆向反射。在四端石墨烯-超导体混合系统中,我们发现即使在相当大的电子-空穴非均质性(通常为30 meV)下,Andreev系数也几乎不会受到影响,尽管强度很高,区分两个Andreev反射的边界仍能很好地保持。 W = 30 meV的电荷坑远大于超导体间隙A = 1 meV。此外,当电荷坑比超导体间隙大两个数量级时,仍然可以明显地检测到特定类型的安德列夫反射。为了定量描述边界的模糊程度,引入了一个量D,该量D用于测量能量空间中镜面Andreev反射和回射之间的交叉区域的宽度。我们确认边界模糊远小于电荷坑洼强度W。此外,我们还比较了安德森无序效应的影响,发现在这种情况下边界的保持更为明显。最后,研究了安德列夫反射系数的波动。在典型的实验电荷坑中,当粒子的能量远离边界时,波动很小。这再次证明,在存在电子-空穴不均匀性时,可以清楚地区分并检测到逆向反射和镜面反射。

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