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Exciton storage in CdSe/CdS tetrapod semiconductor nanocrystals: Electric field effects on exciton and multiexciton states

机译:CdSe / CdS四脚架半导体纳米晶体中的激子存储:电场对激子和多激子态的影响

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摘要

CdSe/CdS nanocrystal tetrapods are interesting building blocks for excitonic circuits, where the now of excitation energy is gated by an external stimulus. The physical morphology of the nanoparticle, along with the electronic structure, which favors electron delocalization between the two semiconductors, suggests that all orientations of a particle relative to an external electric field will allow for excitons to be dissociated, stored, and released at a later time. While this approach, in principle, works, and fluorescence quenching of over 95% can be achieved electrically, we find that discrete trap states within the CdS are required to dissociate and store the exciton. These states are rapidly filled up with increasing excitation density, leading to a dramatic reduction in quenching efficiency. Charge separation is not instantaneous on the CdS excitonic antennae in which light absorption occurs, but arises from the relaxed exciton following hole localization in the core. Consequently, whereas strong electromodulation of the core exciton is observed, the core multiexciton and the CdS arm exciton are not affected by an external electric field.
机译:CdSe / CdS纳米晶体四脚架是激子电路的有趣构建块,其中的激发能量现在受到外部刺激的控制。纳米粒子的物理形态以及有助于在两个半导体之间进行电子离域的电子结构表明,粒子相对于外部电场的所有取向都将允许激子在以后离解,存储和释放。时间。虽然这种方法从原理上讲是可行的,并且可以通过电手段实现超过95%的荧光猝灭,但我们发现CdS中需要离散的陷阱状态才能解离和存储激子。随着激发密度的增加,这些状态迅速被填充,导致淬灭效率急剧下降。电荷分离不是在发生光吸收的CdS激子天线上瞬时发生的,而是由空穴中的空穴定位后的激子引起的。因此,尽管观察到了核心激子的强电调制,但是核心多激子和CdS臂激子不受外部电场的影响。

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  • 来源
    《Physical review》 |2012年第4期|p.045303.1-045303.6|共6页
  • 作者单位

    Department of Physics & Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112, USA;

    Department of Physics & Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112, USA;

    Department of Chemistry, The University of Chicago, 929 East 57th Street, GCISE205, Chicago, Illinois 60637, USA;

    Department of Chemistry, The University of Chicago, 929 East 57th Street, GCISE205, Chicago, Illinois 60637, USA;

    Institut fur Experimented und Angewandte Physik, Universitdt Regensburg, Universitdtsstrasse 31, 93053 Regensburg, Germany Department of Physics & Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112, USA;

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  • 正文语种 eng
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  • 关键词

    charge carriers: generation, recombination, lifetime, trapping, mean free paths; nanocrystalline materials;

    机译:电荷载体:产生;重组;寿命;捕获;平均自由程;纳米晶材料;

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