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首页> 外文期刊>Physical review >Phonon polaritons in uniaxial crystals: A Raman scattering study of polaritons in α-GaN
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Phonon polaritons in uniaxial crystals: A Raman scattering study of polaritons in α-GaN

机译:单轴晶体中的声子极化子:α-GaN中极化子的拉曼散射研究

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摘要

We present Raman scattering results on phonon polaritons in single crystals of a-GaN. A detailed theoretical treatment of their dispersion and Raman scattering efficiency in wurtzite-type crystals is given. Pure symmetry polaritons (ordinary and extraordinary) are accessible in near-forward scattering geometry according to the theory. For this purpose, the experimental setup uses rectangular aperture windows in front of the entrance lens. Thus measurements with well defined wave-vector transfer can be realized. The observed dispersion curves and scattering efficiency results are compared with theoretical ones and are found to be in excellent agreement.
机译:我们提出了a-GaN单晶中声子极化子的拉曼散射结果。给出了其在纤锌矿型晶体中的分散和拉曼散射效率的详细理论处理。根据该理论,在近前散射几何中可以访问纯对称极化子(普通和非常规)。为此,实验装置在入射镜前面使用矩形光圈窗。因此,可以实现具有明确定义的波矢量传输的测量。将观察到的色散曲线和散射效率结果与理论值进行比较,发现它们之间具有极好的一致性。

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  • 来源
    《Physical review》 |2013年第10期|104303.1-104303.14|共14页
  • 作者单位

    TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany;

    TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany;

    TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany;

    TU Bergakademie Freiberg, Institute of Theoretical Physics, Leipziger Str. 23, D-09599 Freiberg, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors;

    机译:Ⅲ-Ⅴ和Ⅱ-Ⅵ族半导体;

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