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X-ray spectroscopic study of BaFeO_3 thin films: An Fe~(4+) ferromagnetic insulator

机译:BaFeO_3薄膜的X射线光谱研究:Fe〜(4+)铁磁绝缘体

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摘要

We investigated the electronic and magnetic properties of fully oxidized BaFeO_3 thin films, which show ferromagnetic-insulating properties with cubic crystal structure, by hard x-ray photoemission spectroscopy (HAXPES), x-ray absorption spectroscopy (XAS), and soft x-ray magnetic circular dichroism (XMCD). We analyzed the results with configuration-interaction (CI) cluster-model calculations for Fe~(4+), which showed good agreement with the experimental results. We also studied SrFeO_3 thin films, which have an Fe~(4+) ion helical magnetism in cubic crystal structure, but are metallic at all temperatures. We found that BaFeO_3 thin films are insulating with large magnetization (1.7 μ_B/formula unit) under ~1 T, using valence-band HAXPES and Fe 2p XMCD, which is consistent with the previously reported resistivity and magnetization measurements. Although Fe 1p core-level HAXPES and Fe 2p XAS spectra of BaFeO_3 and SrFeO_3 thin films are quite similar, we compared the insulating BaFeO_3 to metallic SrFeO_3 thin films with valence-band HAXPES. The CI cluster-model analysis indicates that the ground state of BaFeO_3 is dominated by d~5L (L: ligand hole) configuration due to the negative charge transfer energy, and that the band gap has significant O 2p character. We revealed that the differences of the electronic and magnetic properties between BaFeO_3 and SrFeO_3 arise from the differences in their lattice constants, through affecting the strength of hybridization and bandwidth.
机译:我们通过硬X射线光发射光谱(HAXPES),X射线吸收光谱(XAS)和软X射线研究了完全氧化的BaFeO_3薄膜的电子和磁性,这些薄膜显示出具有立方晶体结构的铁磁绝缘性能。磁性圆二色性(XMCD)。我们用配置相互作用(CI)簇模型计算了Fe〜(4+)的结果,与实验结果吻合良好。我们还研究了SrFeO_3薄膜,该薄膜在立方晶体结构中具有Fe〜(4+)离子螺旋磁性,但在所有温度下均为金属。我们发现,使用价带HAXPES和Fe 2p XMCD,BaFeO_3薄膜在〜1 T下以大磁化强度(1.7μB/配方单位)绝缘,这与先前报道的电阻率和磁化强度测量结果一致。尽管BaFeO_3和SrFeO_3薄膜的Fe 1p核能级HAXPES和Fe 2p XAS光谱非常相似,但我们还是将绝缘BaFeO_3与具有价带HAXPES的金属SrFeO_3薄膜进行了比较。 CI簇模型分析表明,由于负电荷转移能,BaFeO_3的基态受d〜5L(L:配体孔)构型的支配,并且带隙具有明显的O 2p特性。我们发现BaFeO_3和SrFeO_3之间的电子和磁性之间的差异是由于它们的晶格常数不同而引起的,这是通过影响杂交强度和带宽而引起的。

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  • 来源
    《Physical review》 |2015年第11期|115101.1-115101.7|共7页
  • 作者单位

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan,Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan;

    RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan,Institute of Nano Science and Technology, Phase -10, Sector - 64, Mohali, Punjab, India;

    Condensed Matter Research Center and Photon Factory, Institute of Materials Structure Science (IMSS), High Energy Accelerator Research Organization (KEK), Ibaraki 305-0801, Japan;

    Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Kouto 679-5198, Japan;

    Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan;

    Department of Complexity Science and Engineering, University of Tokyo, Chiba 277-8561, Japan;

    RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA,Department of Applied Physics, Stanford University, Stanford, California 94305, USA;

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan,RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan;

    Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan,Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan;

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  • 正文语种 eng
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  • 关键词

    magnetic properties of thin films, surfaces, and interfaces; metal-insulator transitions and other electronic transitions; adsorbed layers and thin films; electrical properties of specific thin films;

    机译:薄膜;表面和界面的磁性能;金属-绝缘体过渡和其他电子过渡;吸附层和薄膜;特定薄膜的电性能;

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