首页> 外文期刊>Physical Review. B, Condensed Matter >Metal-insulator transition and pseudogap in Bi_(1.76)Pb_(0.35)Sr_(1.89)CuO_(6+δ) high-T_c cuprates
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Metal-insulator transition and pseudogap in Bi_(1.76)Pb_(0.35)Sr_(1.89)CuO_(6+δ) high-T_c cuprates

机译:Bi_(1.76)Pb_(0.35)Sr_(1.89)CuO_(6 +δ)高T_c铜酸盐中的金属-绝缘体跃迁和拟间隙

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摘要

It is inferred from bulk-sensitive muon Knight shift measurement for a Bi_(1.76)Pb_(0.35)Sr_(1.89)CuO_(6+δ) single-layer cuprate that the metal-insulator (MI) transition (in the low-temperature limit, T → 0) occurs at the critical hole concentration p = p_(MI) = 0.09(1), where the electronic density of states (DOS) at the Fermi level is reduced to zero by the pseudogap irrespective of the Neel order or spin glass magnetism. Superconductivity also appears for p > p_(MI), suggesting that this feature is controlled by the MI transition. More interestingly, the magnitude of the DOS reduction induced by the pseudogap remains unchanged over a wide doping range (0.1 ≤ p ≤ 0.2), indicating that the pseudogap remains as a hallmark of the MI transition for p > p_(MI).
机译:从Bi_(1.76)Pb_(0.35)Sr_(1.89)CuO_(6 +δ)单层铜酸盐的体敏μ子Knight位移测量可以推断出金属-绝缘体(MI)的转变(在低温下)极限T = 0)出现在临界空穴浓度p = p_(MI)= 0.09(1)处,其中伪间隙将费米能级的态电子密度(DOS)降低为零,而与Neel阶数或自旋玻璃磁性。当p> p_(MI)时,也会出现超导现象,这表明该特征受MI跃迁控制。更有趣的是,由伪间隙引起的DOS降低的幅度在很宽的掺杂范围(0.1≤p≤0.2)范围内保持不变,这表明伪间隙仍然是p> p_(MI)的MI跃迁的标志。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2016年第11期|115123.1-115123.5|共5页
  • 作者单位

    Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan,Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido 050-8585, Japan;

    Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan,Department of Materials Structure Science, Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan;

    Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan;

    Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan,Department of Materials Structure Science, Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan;

    Muon Science Laboratory and Condensed Matter Research Center, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan,Department of Materials Structure Science, Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan;

    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan,Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan;

    Department of Engineering and Applied Sciences, Sophia University, Tokyo 102-8554, Japan;

    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan;

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