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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Direct measurement of interfacial Dzyaloshinskii-Moriya interaction in X|CoFeB|MgO heterostructures with a scanning NV magnetometer (X=Ta, TaN, and W)
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Direct measurement of interfacial Dzyaloshinskii-Moriya interaction in X|CoFeB|MgO heterostructures with a scanning NV magnetometer (X=Ta, TaN, and W)

机译:使用扫描NV磁力计(X = Ta,TaN和W)直接测量X | CoFeB | MgO异质结构中的界面Dzyaloshinskii-Moriya相互作用

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摘要

The Dzyaloshinskii-Moriya interaction (DMI) has recently attracted considerable interest owing to its fundamental role in the stabilization of chiral spin textures in ultrathin ferromagnets, which are interesting candidates for future spintronic technologies. Here we employ a scanning nanomagnetometer based on a single nitrogen-vacancy defect in diamond to locally probe the strength of the interfacial DMI in CoFeB|MgO ultrathin films grown on different heavy metal underlayers X = Ta, TaN, and W. By measuring the stray field emanating from domain walls in micron-long wires of such materials, we observe deviations from the Bloch profile for TaN and W underlayers that are consistent with a positive DMI value favoring right-handed chiral spin structures. Moreover, our measurements suggest that the DMI constant might vary locally within a single sample, illustrating the importance of local probes for the study of magnetic order at the nanoscale.
机译:由于Dzyaloshinskii-Moriya相互作用(DMI)在稳定超薄铁磁体中的手性自旋织构中起着重要作用,最近引起了相当大的兴趣,而超薄铁磁体中的手性自旋织构是未来自旋电子技术的有趣候选者。在这里,我们采用基于金刚石中单个氮空位缺陷的扫描纳米磁力仪来局部探测在不同重金属下层X = Ta,TaN和W上生长的CoFeB | MgO超薄膜中界面DMI的强度。从此类材料的微米级长丝的畴壁发出的磁场,我们观察到TaN和W底层与Bloch轮廓的偏差与正DMI值(有利于右旋手性自旋结构)一致。此外,我们的测量结果表明,DMI常数在单个样品中可能会局部变化,这说明了局部探针对于研究纳米级磁序的重要性。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2016年第6期|064413.1-064413.8|共8页
  • 作者单位

    Laboratoire Charles Coulomb, Universite de Montpellier and CNRS, 34095 Montpellier, France,Laboratoire Aime Cotton, CNRS, Universite Paris-Sud, ENS Cachan, Universite Paris-Saclay, 91405 Orsay Cedex, France;

    Laboratoire Charles Coulomb, Universite de Montpellier and CNRS, 34095 Montpellier, France;

    Laboratoire Aime Cotton, CNRS, Universite Paris-Sud, ENS Cachan, Universite Paris-Saclay, 91405 Orsay Cedex, France;

    Laboratoire Aime Cotton, CNRS, Universite Paris-Sud, ENS Cachan, Universite Paris-Saclay, 91405 Orsay Cedex, France;

    Laboratoire Aime Cotton, CNRS, Universite Paris-Sud, ENS Cachan, Universite Paris-Saclay, 91405 Orsay Cedex, France;

    Institut d'Electronique Fondamentale, CNRS, Universite Paris-Sud, Universite Paris-Saclay, 91405 Orsay, France;

    Institut d'Electronique Fondamentale, CNRS, Universite Paris-Sud, Universite Paris-Saclay, 91405 Orsay, France;

    Institut d'Electronique Fondamentale, CNRS, Universite Paris-Sud, Universite Paris-Saclay, 91405 Orsay, France;

    Institut d'Electronique Fondamentale, CNRS, Universite Paris-Sud, Universite Paris-Saclay, 91405 Orsay, France;

    Laboratoire de Physique des Solides, CNRS, Universite Paris-Sud, Universite Paris-Saclay, 91405 Orsay, France;

    Laboratoire de Physique des Solides, CNRS, Universite Paris-Sud, Universite Paris-Saclay, 91405 Orsay, France;

    National Institute for Materials Science, Tsukuba 305-0047, Japan;

    National Institute for Materials Science, Tsukuba 305-0047, Japan;

    Laboratoire Charles Coulomb, Universite de Montpellier and CNRS, 34095 Montpellier, France;

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