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High-temperature superfluidity of the two-component Bose gas in a transition metal dichalcogenide bilayer

机译:过渡金属二卤化物双分子层中两组分玻色气体的高温超流

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The high-temperature superfluidity of two-dimensional dipolar excitons in two parallel transition metal dichalcogenide (TMDC) layers is predicted. We study Bose-Einstein condensation in the two-component system of dipolar A and B excitons. The effective mass, energy spectrum of the collective excitations, the sound velocity, and critical temperature are obtained for different TMDC materials. It is shown that in the Bogoliubov approximation, the sound velocity in the two-component dilute exciton Bose gas is always larger than in any one-component exciton system. The difference between the sound velocities for two-component and one-component dilute gases is caused by the fact that the sound velocity for a two-component system depends on the reduced mass of A and B excitons, which is always smaller than the individual mass of A or B exciton. Due to this fact, the critical temperature T_c for superfluidity for the two-component exciton system in a TMDC bilayer is about one order of magnitude higher than T_c in any one-component exciton system. We propose to observe the superfluidity of two-dimensional dipolar excitons in two parallel TMDC layers, which causes two opposite superconducting currents in each TMDC layer.
机译:预测了两个平行的过渡金属二卤化双金属(TMDC)层中二维偶极激子的高温超流动性。我们研究偶极A和B激子的两组分系统中的Bose-Einstein凝聚。对于不同的TMDC材料,获得了有效质量,集体激发能谱,声速和临界温度。结果表明,在Bogoliubov近似中,二组分稀激子Bose气体中的声速始终大于任何一组分激子系统中的声速。两组分和一组分稀薄气体的声速之间的差异是由于两组分系统的声速取决于减小的A和B激子质量,该质量始终小于单个质量。 A或B激子由于这个事实,TMDC双层中双组分激子系统的超流动性临界温度T_c比任何单组分激子系统中的T_c高约一个数量级。我们建议在两个平行的TMDC层中观察二维偶极激子的超流动性,这会在每个TMDC层中产生两个相反的超导电流。

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  • 来源
    《Physical Review. B, Condensed Matter》 |2016年第24期|245410.1-245410.14|共14页
  • 作者单位

    Physics Department, New York City College of Technology, The City University of New York, Brooklyn, New York 11201, USA and The Graduate School and University Center, The City University of New York, New York, New York 10016, USA;

    Physics Department, New York City College of Technology, The City University of New York, Brooklyn, New York 11201, USA and The Graduate School and University Center, The City University of New York, New York, New York 10016, USA;

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