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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Point defects in the 1T' and 2H phases of single-layer MoS_2: A comparative first-principles study
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Point defects in the 1T' and 2H phases of single-layer MoS_2: A comparative first-principles study

机译:单层MoS_2 1T'和2H相中的点缺陷:对比性第一性原理研究

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The metastable 1T' phase of layered transition metal dichalcogenides has recently attracted considerable interest due to electronic properties, possible topological phases, and catalytic activity. We report a comprehensive theoretical investigation of intrinsic point defects in the 1T' crystalline phase of single-layer molybdenum disulfide (1T'-MoS_2) and provide comparison to the well-studied semiconducting 2H phase. Based on density functional theory calculations, we explore a large number of configurations of vacancy, adatom, and antisite defects and analyze their atomic structure, thermodynamic stability, and electronic and magnetic properties. The emerging picture suggests that, under thermodynamic equilibrium, 1T'-MoS_2 is more prone to hosting lattice imperfections than the 2H phase. More specifically, our findings reveal that the S atoms that are closer to the Mo atomic plane are the most reactive sites. Similarly to the 2H phase, S vacancies and adatoms in 1T'-MoS_2 are very likely to occur while Mo adatoms and antisites induce local magnetic moments. Contrary to the 2H phase, Mo vacancies in 1T'-MoS_2 are expected to be an abundant defect due to the structural relaxation that plays a major role in lowering the defect formation energy. Overall, our study predicts that the realization of high-quality flakes of 1T'-MoS_2 should be carried out under very careful laboratory conditions but at the same time the facile defects introduction can be exploited to tailor physical and chemical properties of this polymorph.
机译:由于电子性能,可能的拓扑相和催化活性,层状过渡金属二硫化氢的亚稳1T'相最近引起了人们的极大兴趣。我们报告了单层二硫化钼(1T'-MoS_2)的1T'结晶相中固有点缺陷的全面理论研究,并与经过充分研究的半导体2H相进行了比较。基于密度泛函理论计算,我们探索了许多空位,吸附原子和反位缺陷的构型,并分析了它们的原子结构,热力学稳定性以及电子和磁性。新兴的图片表明,在热力学平衡下,1T'-MoS_2比2H相更容易出现晶格缺陷。更具体地说,我们的发现表明,更接近Mo原子平面的S原子是反应性最高的位点。类似于2H相,极有可能在1T'-MoS_2中出现S空位和原子,而Mo原子和反位点会诱导局部磁矩。与2H相相反,由于结构弛豫在降低缺陷形成能方面起主要作用,因此1T'-MoS_2中的Mo空位预计是大量缺陷。总的来说,我们的研究预测高质量1T'-MoS_2薄片的实现应在非常仔细的实验​​室条件下进行,但同时可以引入容易引入的缺陷来定制这种多晶型物的物理和化学性质。

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