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首页> 外文期刊>Physical review. B, Condensed Matter And Materals Physics >Spin-wave nonreciprocity and magnonic band structure in a thin permalloy film induced by dynamical coupling with an array of Ni stripes
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Spin-wave nonreciprocity and magnonic band structure in a thin permalloy film induced by dynamical coupling with an array of Ni stripes

机译:镍合金阵列动态耦合引起的坡莫合金薄膜中的自旋波不可逆性和强子能带结构

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摘要

An efficient way for control of the spin wave propagation in a magnetic medium is the use of periodic patterns known as magnonic crystals (MCs). However, the fabrication of MCs especially bicomponents, with periodicity in nanoscale, is a challenging task due to the requirement for sharp interfaces. An alternative method to circumvent this problem is to use homogeneous ferromagnetic film with a modified periodically surrounding. In this work we demonstrate that the magnonic band structure is formed in thin Py film due to dynamical magnetostatic coupling with the array of Ni stripes. We show that the band gap width can be systematically tuned by changing separation between film and stripes. We show also the effect of nonreciprocity, which is seen at the band gap edge which is shifted from the Brillouin zone boundary and also in nonreciprocal interaction of propagating spin waves in Py film with the standing waves in Ni stripes. Our findings open a possibility for further investigation and exploitation of the nonreciprocity and band structure in magnonic devices.
机译:控制自旋波在磁性介质中传播的有效方法是使用被称为强磁晶体(MCs)的周期性模式。然而,由于需要尖锐的界面,具有纳米级周期性的MC尤其是双组分的制造是一项挑战性的任务。解决此问题的另一种方法是使用均一的铁磁膜,其周期性的周围被修饰。在这项工作中,我们证明了由于与Ni条带阵列的动态静磁耦合,在薄Py薄膜中形成了磁能带结构。我们表明,可以通过改变薄膜和条纹之间的间隔来系统地调整带隙宽度。我们还显示了不可逆性的影响,这是在从布里渊区边界偏移的带隙边缘处观察到的,并且还在Py膜中传播的自旋波与Ni条纹中的驻波的不可逆相互作用中看到。我们的发现为进一步研究和开发磁控器件中的不可逆性和能带结构提供了可能性。

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    《Physical review. B, Condensed Matter And Materals Physics 》 |2017年第10期| 104411.1-104411.7| 共7页
  • 作者单位

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04 Bratislava, Slovakia;

    Faculty of Physics, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614 Poznan, Poland;

    Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore;

    Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore;

    Istituto Officina dei Materiali del CNR (CNR-IOM), Sede Secondaria di Perugia, c/o Dipartimento di Fisica e Geologia, Universita di Perugia, I-06123 Perugia, Italy;

    Faculty of Physics, Adam Mickiewicz University in Poznan, Umultowska 85, 61-614 Poznan, Poland;

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