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Time-domain stability of parametric synchronization in a spin-torque nano-oscillator based on a magnetic tunnel junction

机译:基于磁隧道结的自旋转矩纳米振荡器中参数同步的时域稳定性

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摘要

We report on time-domain stability of the parametric synchronization in a spin-torque nano-oscillator (STNO) based on a magnetic tunnel junction. Time-domain measurements of the instantaneous frequency (f_i) of a parametrically synchronized STNO show random short-term unlocking of the STNO signal for low injected radio-frequency (RF) power, which cannot be revealed in time-averaged frequency domain measurements. Macrospin simulations reproduce the experimental results and reveal that the random unlocking during synchronization is driven by thermal fluctuations. We show that by using a high injected RF power, random unlocking of the STNO can be avoided. However, a perfect synchronization characterized by complete suppression of phase noise, so-called phase noise squeezing, can be obtained only at a significantly higher RF power. Our macrospin simulations suggest that a lower temperature and a higher positive ratio of the fieldlike torque to the spin transfer torque reduce the threshold RF power required for phase noise squeezing under parametric synchronization.
机译:我们在基于磁隧道结的自旋扭矩纳米振荡器(STNO)中报告参数同步的时域稳定性。参数同步的STNO的瞬时频率(f_i)的时域测量表明,对于低注入射频(RF)功率,STNO信号的随机短期解锁,这在时均频域测量中无法揭示。 Macrospin仿真再现了实验结果,并揭示了同步期间的随机解锁是由热波动驱动的。我们表明,通过使用高注入的RF功率,可以避免STNO的随机解锁。但是,只有在明显更高的RF功率下才能获得具有完全抑制相位噪声(所谓的相位噪声压缩)的完美同步。我们的宏自旋仿真表明,较低的温度和较高的场转矩与自旋传递转矩的正比会降低参数同步下相位噪声压缩所需的阈值RF功率。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2017年第2期|024427.1-024427.6|共6页
  • 作者单位

    Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-110016, India;

    Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-110016, India;

    School of Electronic Science and Engineering, Nanjing University, 210093 Nanjing, China,Department of Physics, University of Gothenburg, 412 96 Gothenburg, Sweden;

    Department of Physics, University of Gothenburg, 412 96 Gothenburg, Sweden,Materials and Nanophysics, School of Engineering Sciences, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;

    Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-110016, India;

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