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Intrinsic Compressive Stress in Polycrystalline Films is Localized at Edges of the Grain Boundaries

机译:多晶膜中的固有压缩应力在晶界的边缘处定位

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摘要

The intrinsic compression that arises in polycrystalline thin films under high atomic mobility conditions has been attributed to the insertion or trapping of adatoms inside grain boundaries. This compression is a consequence of the stress field resulting from imperfections in the solid and causes the thermomechanical fatigue that is estimated to be responsible for 90% of mechanical failures in current devices. We directly measure the local distribution of residual intrinsic stress in polycrystalline thin films on nanometer scales, using a pioneering method based on atomic force microscopy. Our results demonstrate that, at odds with expectations, compression is not generated inside grain boundaries but at the edges of gaps where the boundaries intercept the surface. We describe a model wherein this compressive stress is caused by Mullins-type surface diffusion towards the boundaries, generating a kinetic surface profile different from the mechanical equilibrium profile by the Laplace-Young equation. Where the curvatures of both profiles differ, an intrinsic stress is generated in the form of Laplace pressure. The Srolovitz-type surface diffusion that results from the stress counters the Mullins-type diffusion and stabilizes the kinetic surface profile, giving rise to a steady compression regime. The proposed mechanism of competition between surface diffusions would explain the flux and time dependency of compressive stress in polycrystalline thin films.
机译:在高原子迁移率条件下在多晶薄膜中产生的固有压缩已经归因于晶界内的吸附组织的插入或捕获。这种压缩是由固体中缺陷产生的应力场的结果,并导致估计在当前装置中的90%的机械故障负责的热机械疲劳。我们使用基于原子力显微镜的先驱方法直接测量纳米尺度上的多晶薄膜中残留内在应力的局部分布。我们的结果表明,在预期的赔率下,压缩不是在晶界内产生的,而是在边界拦截表面的间隙边缘处。我们描述了一种模型,其中这种压缩应力由穆辛型表面扩散朝向边界引起的,通过拉普拉斯幼年式产生与机械平衡曲线不同的动力学表面轮廓。在两个轮廓的曲率不同的情况下,以拉普拉斯压力的形式产生固有应力。由应力计数器产生的SROLOVITZ型表面扩散,Mullins型扩散并稳定动力学表面轮廓,从而产生稳定的压缩状态。表面扩散之间所提出的竞争机制将解释压缩应力在多晶薄膜中的通量和时间依赖性。

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  • 来源
    《Physical review letters》 |2017年第26期|256102.1-256102.5|共5页
  • 作者

    Vasco Enrique; Polop Celia;

  • 作者单位

    CSIC Inst Ciencia Mat Madrid Sor Juana Ines de la Cruz 3 Madrid 28049 Spain;

    Univ Autonoma Madrid Inst Nicolas Cabrera & Condensed Matter Phys Ctr Dept Fis Mat Condensada E-28049 Madrid Spain;

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