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机译:WSE_2 Monolayer中局部激励子的缺陷结构
Fudan Univ State Key Lab Surface Phys Key Lab Micro & Nano Photon Struct MOE Shanghai 200433 Peoples R China|Fudan Univ Dept Phys Shanghai 200433 Peoples R China;
Renmin Univ China Dept Phys Beijing 100872 Peoples R China|Renmin Univ China Beijing Key Lab Optoelect Funct Mat & Microna Dev Beijing 100872 Peoples R China;
Acad Sinica Res Ctr Appl Sci Taipei 10617 Taiwan|King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;
Fudan Univ State Key Lab Surface Phys Key Lab Micro & Nano Photon Struct MOE Shanghai 200433 Peoples R China|Fudan Univ Dept Phys Shanghai 200433 Peoples R China;
King Abdullah Univ Sci & Technol Phys Sci & Engn Div Thuwal 239556900 Saudi Arabia;
Renmin Univ China Dept Phys Beijing 100872 Peoples R China|Renmin Univ China Beijing Key Lab Optoelect Funct Mat & Microna Dev Beijing 100872 Peoples R China;
Fudan Univ State Key Lab Surface Phys Key Lab Micro & Nano Photon Struct MOE Shanghai 200433 Peoples R China|Fudan Univ Dept Phys Shanghai 200433 Peoples R China|Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Jiangsu Peoples R China;
机译:扭曲WSE_2 / WSE_2 Homostructure中分裂缺陷的激子观察
机译:单层WSe_2中缺陷约束激子的微秒谷寿命。
机译:WSe_2中作为单光子发射体的局部谷值缺陷激子
机译:WSE_2 Monolayers的激子动态,用于涉及H-BN的不同堆叠方案
机译:(2 + 1)D光子结构中的光学子弹及其与局部缺陷的相互作用。
机译:表面等离子激元辅助单层半导体横向异质结构中的级联激子能量转移
机译:单层WSE_2局部激光局部激光光谱