Velocity of Domain-Wall Motion Induced by Electrical Current in the Ferromagnetic Semiconductor (Ga,Mn)As

摘要

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.