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机译:使用角度分辨光发射光谱学的拓扑绝缘体Bi_2Se_3的电子结构:几乎全表面自旋极化的证据
Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973, USA;
National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973, USA;
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;
Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973, USA;
Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973, USA;
phonons; fermi surface: calculations and measurements; effective mass, G factor; spin-orbit coupling, zeeman and stark splitting, jahn-teller effect; occurrence, potential candidates;
机译:使用角度分辨光发射光谱法测量拓扑绝缘子Bi_2Se_3表面上异常弱的电子-声子耦合
机译:时间分辨和角度分辨光发射光谱法测量拓扑绝缘子Bi_2Se_3表面的固有狄拉克费米子冷却
机译:拓扑绝缘体中费米表面翘曲与面外自旋极化之间的关系:自旋和角度分辨光发射的视角
机译:角度分辨的光曝光光谱研究在磁杂质存在下拓扑绝缘子Bi_2se_3的电子带结构
机译:拓扑绝缘子的基于激光的角分辨光发射光谱。
机译:相关拓扑绝缘子YbB6表面状态的角度分辨光发射光谱研究
机译:拓扑绝缘子Bi2se3的电子结构 角度分辨光电子能谱:几乎全表面的证据 自旋极化