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Valley-Dependent Brewster Angles and Goos-Hanchen Effect in Strained Graphene

机译:应变石墨烯中谷相关的布鲁斯特角和Goos-Hanchen效应

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摘要

We demonstrate theoretically how local strains in graphene can be tailored to generate a valley-polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K') show different Brewster-like angles and Goos-Hanchen shifts, exhibiting a close analogy with light propagating behavior. In a strain-induced waveguide, electrons in K and K' valleys have different group velocities, which can be used to construct a valley filter in graphene without the need for any external fields.
机译:我们从理论上证明了石墨烯中的局部应变如何可以被定制以产生谷极化电流。通过对局部应变分布进行适当的工程设计,我们发现相反谷(K或K')中的电子显示出不同的布鲁斯特角和Goos-Hanchen位移,与光的传播行为具有相似的相似性。在应变感应波导中,K和K'谷中的电子具有不同的基团速度,可用于在石墨烯中构建谷值滤波器,而无需任何外部场。

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  • 来源
    《Physical review letters》 |2011年第17期|p.39.1-39.4|共4页
  • 作者单位

    SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China;

    Department of Physics, Zhejiang Normal University, Jinhua 321004, China;

    Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;

    Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden;

    SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China,Beijing Computational Science Research Center, Beijing 100089, China;

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