Erratum: Design Principles and Coupling Mechanisms in the 2D Quantum Well Topological Insulator HgTe/CdTe [Phys. Rev. Lett. 105,176805 (2010)]

摘要

In our Letter, we have incorrectly stated on p. 176805-1, line 4 (abstract); and on p. 176805-3, column 2, line 35; and on p. 176805-4, column 1, line 26 that one monolayer HgTe equals 2.718 A (using lattice constant a = 5.435 A), whereas it is 3.227 A (using the correct lattice constant a = 6.453 A). Thus, the results cited in angstroms are incorrect. The results cited in monolayer unit (Figs. 3 and 4 and the remainder of the text) are correct. None of the results presented in the Letter are affected by this incorrect unit conversion. We thank Dr. B. Yan for pointing this out to us.