...
首页> 外文期刊>Physical review letters >Direct Measurement of the Hole-Nuclear Spin Interaction in Single InP/GaInP Quantum Dots Using Photoluminescence Spectroscopy
【24h】

Direct Measurement of the Hole-Nuclear Spin Interaction in Single InP/GaInP Quantum Dots Using Photoluminescence Spectroscopy

机译:使用光致发光光谱法直接测量单个InP / GaInP量子点中的空穴-核自旋相互作用

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

We measure the hyperfine interaction of the valence band hole with nuclear spins in single InP/GalnP semiconductor quantum dots. Detection of photoluminescence (PL) of both "bright" and "dark" excitons enables direct measurement of the Overhauser shift of states with the same electron but opposite hole spin projections. We find that the hole hyperfine constant is ≈ 11 % of that of the electron and has the opposite sign. By measuring the degree of circular polarization of the PL, an upper limit to the contribution of the heavy-light hole mixing to the measured value of the hole hyperfine constant is deduced. Our results imply that environment-independent hole spins are not realizable in Ⅲ-Ⅴ semiconductor, a result important for solid-state quantum information processing using hole spin qubits.
机译:我们测量单个InP / GalnP半导体量子点中价带孔与核自旋的超精细相互作用。检测“亮”和“暗”激子的光致发光(PL)可以直接测量具有相同电子但空穴自旋投影相反的状态的Overhauser位移。我们发现空穴的超精细常数约为电子常数的11%,并且具有相反的符号。通过测量PL的圆偏振度,可以得出重轻空穴混合对空穴超细常数的测量值的贡献的上限。我们的结果表明,与环境无关的空穴自旋无法在Ⅲ-Ⅴ半导体中实现,这一结果对于使用空穴自旋量子位进行固态量子信息处理非常重要。

著录项

  • 来源
    《Physical review letters》 |2011年第2期|p.027402.1-027402.4|共4页
  • 作者单位

    Department ofPhysics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;

    Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield SI 3JD, United Kingdom;

    Department ofPhysics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;

    Department ofPhysics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    quantum dots; quantum dots; Ⅲ-Ⅴ semiconductors;

    机译:量子点;量子点;Ⅲ-Ⅴ族半导体;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号