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Dynamics and Dissipation Induced by Single-Electron Tunneling in Carbon Nanotube Nanoelectromechanical Systems

机译:碳纳米管纳米机电系统中单电子隧穿引起的动力学和耗散

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摘要

We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system to SET strongly depends on the electronic environment of the quantum dot, in particular, on the total dot capacitance and the tunnel coupling to the metal contacts. Our findings suggest that one could achieve quality factors of 10~6 or higher by choosing appropriate gate dielectrics and/or by improving the tunnel coupling to the leads.
机译:我们演示了通过碳纳米管量子点的单电子隧穿(SET)对其纳米机械运动的影响。我们发现,纳米机电系统对SET的频率响应和耗散在很大程度上取决于量子点的电子环境,特别是取决于总点电容和耦合至金属触点的隧道。我们的发现表明,通过选择适当的栅极电介质和/或通过改善与引线的隧道耦合,可以达到10〜6或更高的品质因数。

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