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首页> 外文期刊>PHYSICAL REVIEW E >Electric-field-induced switchable dark conglomerate phases in a bent-core liquid crystal exhibiting reverse columnar phases
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Electric-field-induced switchable dark conglomerate phases in a bent-core liquid crystal exhibiting reverse columnar phases

机译:弯芯液晶中电场诱导的可切换深色团聚相呈现出柱状逆相

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摘要

Electric-field-induced transitions into switchable dark conglomerate (DC) phases from two types of reversencolumnar mesophases have been observed in the bent-core (BC) compound 2,7-naphthylene bis[4-(3-methyl-n4-n-tetradecyloxybenzoyloxy)] benzoate. Optical and x-ray studies show that the higher temperature columnarnphase corresponds to the orthogonal B1rev phase, whereas the lower temperature columnar phase is a variant ofnthe B1revtilt phase. As the layer fragments in this phase are modulated in order to relieve the steric hindrancencaused by an anticlinic tilting in adjacent blocks, it has been named B1revtiltM. The shape of the chiral domains arendifferent in the DC phases viz. DC-B1rev and DC-B1revtiltM obtained by applying the electric field in the B1rev andnB1revtiltM phases, respectively. While the chiral domains in the DC-B1rev phase appear similar to those observednin other DC phases, the shape of the domains in the DC-B1revtiltM phase appear to have some similarity to thendomains in the banana leaf texture in the B1revtiltM phase implying that the detailed structure in this DC phase maynbe different. Optical observations, electro-optics, and dielectric studies show that the DC-B1rev and DC-B1revtiltMnphases are both switchable and possess a local SmCSPF type of structure. As the temperature is decreased thenswitching behavior changes from ferroelectric to antiferroelectric. The temperature at which this changeovernstarts occurring coincides with the temperature at which the layer modulation occurs to overcome anticlinic tiltnand the B1rev to B1revtiltM phase transition takes place without the application of the electric field. The change innswitching behavior is attributed to a transformation into flat layers with the SmCAPA type of structure as alsonevidenced by the nucleation of bright regions alongside the chiral domains.
机译:在弯曲核(BC)化合物2,7-亚萘基双[4-(3-甲基-n4-n-)-中,已观察到电场诱导的从两种类型的反相柱状中间相转变为可转换的暗团状(DC)相。十四烷基氧基苯甲酰氧基]]苯甲酸酯。光学和X射线研究表明,较高温度的柱状相对应于正交的B1rev相,而较低温度的柱状相是B1revtilt相的变体。由于此阶段中的层碎片经过调制以缓解相邻区块中因反斜向倾斜而引起的空间后位错,因此已将其命名为B1revtiltM。在DC相中手性域的形状是不同的。通过分别在B1rev和nB1revtiltM相中施加电场而获得的DC-B1rev和DC-B1revtiltM。尽管DC-B1rev相中的手性结构域看起来与在其他DC相中观察到的手性结构域相似,但DC-B1revtiltM相中的域的形状似乎与B1revtiltM相中香蕉叶纹理中的结构域相似,这表明详细该直流相的结构可能不同。光学观察,电光和介电研究表明,DC-B1rev和DC-B1revtiltMn相都是可切换的,并且具有局部SmCSPF类型的结构。随着温度降低,开关行为从铁电变为反铁电。该转换开始发生的温度与克服反斜率倾斜发生的层调制发生的温度一致,并且在不施加电场的情况下发生了B1rev至B1revtiltM相变。 insswitching行为的变化归因于具有SmCAPA类型结构的平坦层的转变,这也可以通过手性域旁边明亮区域的成核来证明。

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    《PHYSICAL REVIEW E》 |2013年第6期|1-10|共10页
  • 作者单位

    Raman Research Institute C. V. Raman Avenue Sadashivanagar Bangalore 560 080 India;

    Raman Research Institute C. V. Raman Avenue Sadashivanagar Bangalore 560 080 India;

    Raman Research Institute C. V. Raman Avenue Sadashivanagar Bangalore 560 080 India;

    Raman Research Institute C. V. Raman Avenue Sadashivanagar Bangalore 560 080 India;

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