Ultrahigh Photoresponsive Photodetector Based on Graphene/SnS_2 van der Waals Heterostructure

摘要

SnS_2 exhibits a high absorbance coefficient and strong photoconductive properties in ultraviolet–visible regions, making it a promising photodetector with excellent photoelectric performance. The characteristic of a large yield of photocarriers in SnS_2 with the high mobility of graphene is combined and a vertical graphene/SnS_2 van der Waals heterostructure photodetector is fabricated, which can obtain effective electron–hole pairs separation under the built-in electric field, thus having a high photoresponse. It has the characteristics of ultrahigh responsivity (6.35 × 10~5AW~(-1)) and high external quantum efficiency (2.15 × 10~8%) under 365 nm light. Such high-performance graphene/SnS_2 heterostructures may find promising applications in future optoelectronic devices.