Nanostructured CdS Buffer Layer Fabricated with a Simple Spin-Coating Method for Sb_2S_3 Solar Cells

摘要

Nanostructured CdS thin films are fabricated by a simple spin-coating method atvarious annealing temperatures from 200 to 350 C. CdS films of 80 nm thick,which are composed of nanoparticles or flakes with size 20–200 nm, areobtained. The nanostructured morphology is identified by scanning electronmicroscopy measurement. Sb_2S_3 films with large-sized grains are deposited onthe CdS thin films with hydrothermal method, in which CdS is adopted aselectron transport layer (ETL) for Sb_2S_3 solar cells. The power conversion efficiency(PCE) is 4.88% for the best solar cell based on nanostructured CdS ETLs.Herein, a very facile and effective route to fabricate nanostructured CdS bufferlayer for Sb_2S_3 solar cells is offered.