High-Performance Room-Temperature Extended-Wavelength InAs-Based Middle-Wavelength Infrared Photodetector

摘要

Herein, a high-performance room-temperature extended-wavelength InAs-basedbarrier-type photodetector that operates in the 1.5–3.5 μm wavelength range ispresented. The experimental results show that the uncooled photodetectorexhibits a peak responsivity of 1.47 AW~（-1） at 3 μm and a peak detectivity as highas 1.6 × 10~(10) cm Hz~(1/2)W~（-1） at zero bias, which is 3–10 times higher than that ofavailable commercial InAs photodetectors. The external quantum efficiency at thepeak responsivity is 63%. The nature of the detector’s extended spectralresponse is investigated using numerical computation analyses, which indicatethat such improvement is primarily contributed by the InAsSbP window layer.