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Impurity Gettering by Boron- and Phosphorus-Doped Polysilicon Passivating Contacts for High-Efficiency Multicrystalline Silicon Solar Cells

机译:高效多晶硅多晶硅太阳能电池用硼和磷掺杂的多晶硅钝化触点进行杂质吸收

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摘要

Highly doped polysilicon (poly-Si) on ultra-thin oxide layers are highlighted as they allow both carrier collection efficiency with a low contact resistivity and an excellent surface passivation. Their integration at the rear surface of a high-quality single-crystalline silicon solar cell allows to achieve a record conversion efficiency of 25.7% for a double-side contacted device. However, so far, only a very few studies investigate the interactions between poly-Si passivating contacts and low-quality cheaper silicon wafers. Thus, this study focuses on the external gettering response of both boron (B) and phosphorus (P) in situ doped poly-Si passivating contacts on high-performance multicrystalline silicon. Wafers are extracted from five ingot heights and experience P- and B-doped poly-Si passivating contact fabrication processes. Subsequently, the bulk carrier lifetime and interstitial iron (Fe-i) concentration are characterized and compared with conventional POCl3 and BCl3 thermal diffusion steps, and as-cut references. The P-doped poly-Si contact fabrication process results in gettering more than 99% of the Fe-i, which leads to an increase in the bulk carrier lifetime. Interestingly, the B-doped poly-Si contact also develops a substantial external gettering action, and allows removing 96% of the Fe-i from the bulk.
机译:超薄氧化物层上的高掺杂多晶硅(poly-Si)突出显示出来,因为它们既具有低接触电阻率的载流子收集效率,又具有出色的表面钝化性能。它们在高质量单晶硅太阳能电池背面的集成,使双面接触器件的转换效率达到了创纪录的25.7%。然而,到目前为止,只有极少的研究调查了多晶硅钝化接触与低价便宜的硅晶片之间的相互作用。因此,本研究着眼于高性能多晶硅上原位掺杂的多晶硅钝化触点中硼(B)和磷(P)的外部吸杂响应。从五个晶锭高度提取晶片,并经历P和B掺杂的多晶硅钝化接触制造工艺。随后,表征了载流子寿命和间隙铁(Fe-i)浓度,并将其与常规POCl3和BCl3热扩散步骤以及原样参考进行了比较。 P掺杂的多晶硅接触制造工艺会导致99%以上的Fe-i吸杂,这导致了载流子寿命的增加。有趣的是,掺B的多晶硅接触也产生了明显的外部吸杂作用,并允许从主体中去除96%的Fe-i。

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  • 来源
    《Physica status solidi》 |2019年第17期|1900321.1-1900321.8|共8页
  • 作者单位

    Univ Grenoble Alpes INES Dept Technol Solaires 50 Ave Lac Leman F-73375 Le Bourget Du Lac France|CEA LITEN 50 Ave Lac Leman F-73375 Le Bourget Du Lac France|Aix Marseille Univ IM2NP UMR CNRS 7334 Dept Detect Rayonnements & Fiabilite Campus St Jerome Case 142 F-13397 Marseille 20 France;

    Univ Grenoble Alpes INES Dept Technol Solaires 50 Ave Lac Leman F-73375 Le Bourget Du Lac France|CEA LITEN 50 Ave Lac Leman F-73375 Le Bourget Du Lac France;

    Univ Grenoble Alpes INES Dept Technol Solaires 50 Ave Lac Leman F-73375 Le Bourget Du Lac France|CEA LITEN 50 Ave Lac Leman F-73375 Le Bourget Du Lac France|Agcy Assessment & Applicat Technol Ctr Technol Mat Bldg 224 PUSPIPTEK South Tangerang 15314 Indonesia;

    Aix Marseille Univ IM2NP UMR CNRS 7334 Dept Detect Rayonnements & Fiabilite Campus St Jerome Case 142 F-13397 Marseille 20 France;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    external gettering; high-performance multicrystalline silicon; poly-Si passivating contact; silicon solar cells;

    机译:外部吸气高性能多晶硅多晶硅钝化接触;硅太阳能电池;

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