Scalable Approach for Amorphous Thin Silicon Films Near-IR Laser-Induced Crystallization Using Nickel Absorption Layer

摘要

Technology for thin polycrystalline silicon films preparation is crucial for development of novel semiconductor devices, including flexible electronics. A method for thin polycrystalline silicon film preparation utilizing deposited nickel absorption layer which allows use of inexpensive 1064nm pulsed YAG:Nd laser for laser annealing of magnetronsputtered amorphous silicon is reported here. Film morphology changes are visualized with scanning electron microscopy, its chemical composition and Ni fate upon laser irradiation are studied using Xray energy dispersion analysis and secondary ion mass spectrometry. Silicon crystalline structure changes and its homogeneity are characterized using Raman spectroscopy utilizing mapped spectral measurements. Range of laser radiation energy fluence (Jcm2) is established which allowed for preparation of fully polycrystalline silicon film with crystalline silicon Raman peak position and width comparable to that of singlecrystalline material. Nickel film is found to ablate substantially upon irradiation, leaving remains that can be easily removed by chemical etching.