Extracting Small-Signal Model Parameters of Graphene-Based Field-Effect Transistors

摘要

This paper is aimed at extracting the intrinsic and extrinsic model parametervalues of a small signal model based only on S-parameter measurements. Ananalytically derived method to extract parasitic resistances and then obtain the allintrinsic parameters according to the previous method are proposed. Experimentresults show the extracted model parameters can fit the test data well for ourdevice, which illustrate the validity and accuracy of the extraction method. Inaddition, the authors analyze the huge differences of small-signal parametersbetween graphene-based field-effect transistors (FETs) and traditional MOSFETsin saturation, and then point out the specific direction of improving the radiofrequency performance of graphene-based field-effect transistors.