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Ion beam induced charge (IBIC) irradiation damage study in synthetic single crystal diamond using 2.6 MeV protons

机译:使用2.6 MeV质子在合成单晶金刚石中离子束感应电荷(IBIC)辐照损伤研究

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摘要

We have studied 1hc effects of irradiation induced damage on the detector response of a synthetic single crystal diamond radiation detector. Before introducing radiation damage, the spatial variation of the detector response was investigated using a highly focused 2.6 MeV proton beam. A very uniform response close to 100% charge collection efficiency (CCE) over the whole contact area was found at applied electric field strengths as low as 0.4 V um~(-1). At lower biases, time dependent polarisation phenomena were observed and clearly re-rnduced the average signal amplitude. Subsequently, the 2.6 MeV proton beam has been used 1o introduce radiation damage within selected areas. The ion beam induced charge imaging was repeated to probe the modified regions. Even at an applied electric field of 2.6 V um~(-1), no signal above the analogue threshold of the system was observed in the areas which had received a dose larger then 5 × 10~(14) cm~(-2) whereas more than 90% CCE was reached in the area with 10~(12) protons cm~(-2).
机译:我们已经研究了1hc辐射诱导的损伤对合成单晶金刚石辐射探测器的探测器响应的影响。在引入辐射损伤之前,使用高度聚焦的2.6 MeV质子束研究了探测器响应的空间变化。在施加的电场强度低至0.4 V um〜(-1)时,在整个接触区域上发现了非常接近100%的电荷收集效率(CCE)的非常均匀的响应。在较低的偏置下,观察到时间相关的极化现象,并明显降低了平均信号幅度。随后,使用2.6 MeV质子束1o在选定区域内引入了辐射损伤。重复离子束感应电荷成像以探测修饰区域。即使在2.6 V um〜(-1)的施加电场下,在剂量大于5×10〜(14)cm〜(-2)的区域也没有观察到高于系统模拟阈值的信号。而在10〜(12)个质子cm〜(-2)的区域达到了超过90%的CCE。

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