In situ X-ray investigation of SiGe/Si islands grown by liquid phase epitaxy

摘要

We report on the in situ observation during liquid phase epitaxy (LPE) of Stranski-Krastanow grown SiGe/Si(001) islands with X-ray diffraction methods. Therefore, we developed a growth chamber combined with pre-processed samples which afford LPE under N_2 atmosphere (instead of H_2 which is normally used for LPE) at a synchrotron beamline. The islandrnevolution is probed with X-ray diffraction methods from the backside of a thin silicon substrate which floats on the melt. The way towards LPE in situ X-ray diffraction experiments will be described. Our results show the development of X-ray diffraction signals in dependence of the current growth state.