Diamond Schottky-pn diode without trade-off relationship between on-resistance and blocking voltage

摘要

We successfully improved a merged diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p~+-type layer and a Schottky metal. According to the analysis of operation mechanisms based on band diagrams, we increased the acceptor concentration in the p~+-type layer in order to decrease the on-resistance (R_(un)S), and increased the n- type layer width to reach higher blocking voltage (V_(block)). Consequently, much lower R_(cn)S of 0.03 mΩ cm~2 and higher V_(block) than those of the previously reported diamond SPND were achieved simultaneously. Thus, we elucidated experimentally that the diamond SPND has no trade-off relationship between R_(cn)S and V_(block) and is suitable for low-loss high-power switching devices.