Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N_2 environment

摘要

A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p-GaN structure with heavily Mg-doping grown at low temperature in full N_2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222 A cm~(-2) due to the higher hole concentration as compared to the normal p-GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.