Patterned Ga_2O_3 for current blocking and optical scattering in visible light-emitting diodes

摘要

Patterned gallium oxide (Ga_2O_3) using one-step patterning followed by oxygen plasma treatment on a p-GaN layer can function as both current-blocking and optical-scattering regions for uniform current spreading and improved light-extraction efficiencies. The results showed that the optical output poweroF the LED with patterned Ga_2O_3 increased by 16.8% at 60 mA compared to that of conventional LEDs. Numerical studies on light tracing and emission pattern, and external quantum efficiency evaluation support the improvement of both uniform current spreading and light-extraction efficiencies by patterned Ga_2O_3.