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The stability and dielectric performance of BiNbO_4 prepared by citrate method assisting sintering process

机译:柠檬酸盐法辅助烧结工艺制备BiNbO_4的稳定性和介电性能

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摘要

Low-temperature β phase BiNbO_4 powders (denoted as Low-β) were prepared by a citrate method using home-made water- soluble niobium precursors. The stability of Low-β was systematically investigated from the aspects including calcination temperature, incubation time, and stress existing in pellets. Pure Low-p can be obtained between 700 and 750℃ and the crystal evolution of Low-β has not completed yet, compared with high-temperature β phase. Low-β is kinetically stable and no phase transition occurs when increasing the incubation time below 750 ℃. Above 750 ℃, both the calcination temperature and incubation time can induce the abnormal phase transition from Low-β to a phase; also, stress existing in pellets can effectively activate the phase transition of Low-β. We can conclude that the Low-β is thermodynamically unstable, while in kinetics, Low-β is stable. The dielectric properties of BiNbO_4 ceramics were investigated to analyze the influence of phase of BiNbO_4 powders precursors, especially the effect of phase transition of Low-p. It's found that BiNbO_4 powders firstly calcined at 700 ℃ is the best precursor to prepare dense ceramics with uniform grain size and the dielectric permittivity and dielectric loss of BiNbO_4 ceramics prepared at 1000 ℃ is 56.6 and 0.001 at 10kHz, respectively.
机译:使用自制的水溶性铌前体通过柠檬酸盐法制备了低温β相BiNbO_4粉末(称为Low-β)。从煅烧温度,孵育时间和颗粒中存在的应力等方面系统地研究了Low-β的稳定性。在700至750℃之间可获得纯的Low-p,与高温β相相比,Low-β的晶体演化尚未完成。当增加750℃以下的孵育时间时,低β具有动力学稳定性,并且没有相变发生。在750℃以上,煅烧温度和孵育时间均可引起从Low-β到相的异常相变。同样,颗粒中存在的应力可以有效激活Low-β的相变。我们可以得出结论,Low-β在热力学上是不稳定的,而在动力学上,Low-β是稳定的。研究了BiNbO_4陶瓷的介电性能,以分析BiNbO_4粉末前驱体的相的影响,特别是Low-p相变的影响。研究发现,首先在700℃下煅烧的BiNbO_4粉末是制备具有均匀晶粒尺寸的致密陶瓷的最佳前驱体,而在1000℃下制备的BiNbO_4陶瓷在10kHz下的介电常数和介电损耗分别为56.6和0.001。

著录项

  • 来源
    《Physica status solidi》 |2016年第9期|2525-2530|共6页
  • 作者单位

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China,National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

    Henan Key Laboratory of Photovoltaic Materials, College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, P.R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    BiNbO_4; ceramics; dielectric properties; phase transitions;

    机译:BiNbO_4;陶瓷;介电性能相变;

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