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首页> 外文期刊>Physica Status Solidi. C, Conferences and critical reviews >Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems
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Interdiffusion effect on exchange coupling in annealing NiFe/FeMn and FeMn/NiFe systems

机译:NiFe / FeMn和FeMn / NiFe系统中互扩散对交换耦合的影响

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摘要

The effect of interdiffusion on the exchange coupling field (H_(ex)) and coercivity (H_c) in annealing NiFe/FeMn and FeMn/NiFe systems was investigated in the study. Type I samples: Silicon substra-te/Ta/NiFe/FeMn/Ta and Type II samples: Silicon substrate/Ta/FeMn/NiFe/Ta were prepared. Annealing was carried out at 200 to 450 ℃ for two hours under 720 Oe, respectively. The results show that the Hex and Hc in two types samples were dependent on the annealing temperature. For both types the magnetization loss ratio (△M/M_s) is negative, which reflects a loss of magnetization associated with interfacial mixing caused by annealing. The magnetization loss ratio becomes larger when the annealing temperature increases. The exchange coupling of these two types samples is associated with interfacial diffusion between the NiFe and FeMn interface. The annealing treatment also affected the H_c. In these two types samples, the exchange coupling was improved from modification of the interface between layers by annealing. The extended annealing (above 375 ℃) changes the exchange coupling in these two types samples due to serious interdiffusion of the interface between NiFe and FeMn layers. It results in unwanted inter-diffusion effects at the interface and a concomitant reduction in the exchange bias field.
机译:研究了互扩散对NiFe / FeMn和FeMn / NiFe系统退火过程中交换耦合场(H_(ex))和矫顽力(H_c)的影响。 I型样品:硅基质/ Ta / NiFe / FeMn / Ta和II型样品:硅基质/ Ta / FeMn / NiFe / Ta。分别在720 Oe和200至450℃的温度下退火2小时。结果表明,两种样品中的Hex和Hc均取决于退火温度。对于这两种类型,磁化损耗比(△M / M_s)为负,这反映了退火引起的界面混合所引起的磁化损耗。当退火温度升高时,磁化损失率变大。这两种类型样品的交换耦合与NiFe和FeMn界面之间的界面扩散有关。退火处理也影响了H_c。在这两种类型的样品中,通过退火改变层之间的界面,改善了交换耦合。由于NiFe和FeMn层之间界面的严重相互扩散,延长的退火温度(高于375℃)改变了这两种类型样品的交换耦合。这会在界面处产生有害的相互扩散效应,并同时降低交换偏压场。

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