Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal-organic molecular beam epitaxy

摘要

Molecular hydrogen (H_2) has been investigated as a means to improve ammonia nitridation efficiency and attempts to reduce carbon contamination in. ammonia-based metal-organic molecular beam epitaxy (MOMBE). A 30% improvement in crystalline quality, inferred from XRD, as well as an increase in subsequent GaN bulk growth rate was observed when barernsapphire was subject to H_2 annealing before nitridation. However, the use of H_2 during GaN homoepitaxy on GaN templates resulted in increased earbon contamination and decreased growth rate of GaN. The results demonstrate promise and proper uses of H_2 during GaN growth under certain conditions.