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Uncertainty in PV Module Measurement—Part I: Calibration of Crystalline and Thin-Film Modules

机译:光伏组件测量的不确定度—第一部分:晶体和薄膜组件的校准

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This paper presents recent progress in reducing the measurement uncertainty for crystalline silicon (c-Si) and thin-film PV modules. It describes the measurement procedure and the uncertainty analysis, as applied at the CalLab PV Modules, Fraunhofer ISE's laboratory for module measurements. The uncertainty analysis covers the complete calibration process in detail, including measurements, correction to standard testing conditions, and determination of electrical module parameters ($I_{rm SC}, P_{rm MPP}, V_{rm OC}$, etc.) from the I–V curve. Differences between c-Si and thin-film modules are addressed, most importantly in terms of spectral mismatch factor and short timescale stability problems. The paper outlines the importance of a comprehensive quality assurance system in a calibration laboratory as a prerequisite for accurate measurements on a daily basis. Particular attention is paid to results from a series of measurements taken every three weeks over a three-year period and conducted as part of the quality assurance system. In conclusion, this paper introduces a best-case uncertainty for c-Si module calibration of 1.6% for $P_{rm MPP}$ and 1.3% for $I_{rm SC}$. This represents the lowest reported uncertainty for full size module calibration in a laboratory so far. The presented uncertainty in $P_{rm MPP}$ of cadmium telluride and single-junction amorphous silicon modules is 2.9% and 1.8%, respectively. All mentioned uncertainties are expanded uncertainties ( $k$ = 2).
机译:本文介绍了减少晶体硅(c-Si)和薄膜PV模块的测量不确定度的最新进展。它描述了测量程序和不确定性分析,该方法在Fraunhofer ISE实验室CalLab PV Modules中进行了模块测量。不确定性分析详细涵盖了完整的校准过程,包括测量,对标准测试条件的校正以及电气模块参数的确定( $ I_ {rm SC}, I_V曲线中的P_ {rm MPP},V_ {rm OC} $ 等)。解决了c-Si和薄膜模块之间的差异,最重要的是在光谱失配因子和短时标稳定性问题方面。本文概述了校准实验室中全面质量保证体系的重要性,这是每天进行精确测量的前提。在三年期间内,每三周进行一系列测量,并将其作为质量保证体系的一部分,应特别注意结果。总之,本文介绍了 $ P_ {rm MPP} $ 的c-Si模块校准的最佳情况不确定性1.6% $ I_ {rm SC} $ 的值为1.3%。这代表了迄今为止在实验室中对全尺寸模块校准报告的最低不确定性。碲化镉和单结非晶硅模块的 $ P_ {rm MPP} $ 中的不确定度分别为2.9%和1.8 %, 分别。所有提到的不确定性都是扩展的不确定性( $ k $ = 2)。

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