Electrical Repair of Incomplete Back Contact Insulation (P1) in Cu(In,Ga)Se src='/images/tex/21403.gif' alt='_2'> Photovoltaic Thin-Film Modules

摘要

Incomplete P1 scribing lines between neighboring Mo back electrodes in Copper indium gallium selenide: Cu(In,Ga)Se (CIGS) thin-film modules have been repaired by removing the Mo remnants in the P1 laser line. The repair is achieved by melting and evaporating the Mo remnant with an electrical current. We develop a repair process that is robust to different lengths of the P1 line interruption, to arbitrary defect positions and defect numbers both within one scribing line and the complete module. Furthermore, the repair method provides a reliable feedback about a successful defect repair, whereby affected P1 scribing lines can be located and defects can be counted.