Simulations Based on the Cooptimization Procedure for Plated Contacts With a NiSi Interface

摘要

A cooptimization procedure has been developed for industrial solar cells metalized using a nickel seed layer thickened by a plated silver layer. A theoretical contact resistivity model for NiSi nickel silicide contacts was first computed and inserted into classical power loss equations. Optical, resistive, and recombination losses were then simulated with a standard set of parameters used in production. This procedure allows the generation of efficiency and silver consumption contour plots for homogeneous and selective emitters. For both, general guidelines are given for the optimization of the doping profile, the finger spacing, and the finger thickness.