Enhance the performance of quantum dot-sensitized solar cell by manganese-doped ZnS films as a passivation layer

摘要

To make quantum dot-sensitized solar cells (QDSSCs) more attractive, it is necessary to achieve higher power conversion efficiency. A novel Mn-doped ZnS has been successfully fabricated on CdS/CdSe quantum dots (QDs) by simple successive ion layer adsorption and reaction (SILAR) technique. The Mn-doped ZnS is used as a passivation layer in the QDSSCs. The performance of the QDSSCs was examined in detail using sulfide/polysulfide electrolyte with a Pt or copper sulfide (CuS) counter electrode. Here we demonstrated, the fabricated Mn-doped ZnS QDs shows an improved V_(oc) (0.65 V) compared to bare ZnS QDs (0.60 V). The QDSSC based on a photoanode with Mn-doped ZnS (10 wt% of Zn) shows higher J_(sc) (15.32 mA cm~(-2)) and power conversion efficiency (4.18%) compared to the bare ZnS photoanode (2.90%) under AM 1.5 G one sun illumination. We explore the reasons for this enhancement and demonstrated that it is caused by improved passivation of the ZnS surface by Mn ions, leading to a lower recombination of photo-injected electrons with the electrolyte. The effect of Cu ions in ZnS has been investigated by UV-Vis spectra and current density-voltage analysis.