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机译:低温处理的双层金属氧化物薄膜,用于封装高度稳定的有机光电二极管
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Co. Ltd., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Republic of Korea;
Thin film encapsulation; Water barrier films; Reliability; Metal oxide films;
机译:有机发光二极管显示像素电路采用双栅极低温多Si薄膜晶体管和金属氧化物薄膜晶体管
机译:使用全溶液处理和低温烧结银纳米粒子墨水的稳定有机薄膜晶体管
机译:用于有机发光器件薄膜封装的低温热CVD工艺
机译:Pb的低温处理(Zr_(0.53)Ti_(0.47))O_3来自稳定前体溶胶的薄膜
机译:高度稳定的非晶硅薄膜晶体管及其在透明塑料上可靠的有机发光二极管显示器的集成方法。
机译:用于高迁移率溶液处理的金属氧化物薄膜晶体管的频率稳定离子型混合栅极电介质
机译:热空气辅助全部空气加工的钡掺入CSPBI2BR PEROVSKITE薄膜,用于高效稳定的全无机钙钛矿太阳能电池