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Side leakage into the organic interlayer of unstructured hybrid thin-film encapsulation stacks and lifetime implications for roll-to-roll produced organic light-emitting diodes

机译:侧面泄漏到非结构化混合薄膜封装堆栈的有机中间层中,以及卷对卷生产的有机发光二极管的使用寿命

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摘要

Side leakage experiments have been performed on the organic interlayer, so-called organic coating for planar-ization (OCP), in a hybrid thin-film encapsulation (TFE) stack based on two silicon nitride (SiN) barrier layers that was developed for organic light-emitting diodes (OLED). To measure the side leakage into OCP, a metallic Ca thin-film monitor can be used. However, the water uptake capacity of the Ca monitor affects the measurements. Here, we eliminated the contribution of the Ca layer from the measurement by variation of the Ca thickness and by measuring the side leakage until it reaches the Ca layer. For OCP with a water getter inside (5% CaO) the side leakage can be monitored by the loss of scattering of the CaO when it reacts with water to Ca(OH)_2. This work describes measurements of the rate of side leakage into the OCP layer of the TFE stack, both for plain OCP and for OCP with CaO getter inside. The side leakage curves are used to derive diffusion coefficients. Performing measurements at various climates provides acceleration factors that are relevant for the performance quantification of the TFE stack. The limiting factors on the performance of an unstructured TFE stack as produced in a roll-to-roll (R2R) process are presented. For small OLED devices side leakage would drastically reduce the shelf lifetime but for larger devices the permeation properties of the TFE stack determine the shelf lifetime.
机译:在基于两个氮化硅(SiN)阻​​挡层的混合薄膜封装(TFE)叠层中,对有机中间层(所谓的平面化有机涂层(OCP))进行了侧漏实验,该层是为有机层开发的发光二极管(OLED)。要测量泄漏到OCP的侧面,可以使用金属Ca薄膜监视器。但是,Ca监测器的吸水量会影响测量。在这里,我们通过改变Ca厚度和测量直至到达Ca层的侧漏来消除了Ca层的影响。对于内部有吸水剂(5%CaO)的OCP,当CaO与水反应生成Ca(OH)_2时,可以通过损失CaO的散射损失来监测侧面泄漏。这项工作描述了对于普通OCP和内部带有CaO吸气剂的OCP,都测量到TFE堆栈的OCP层中的侧漏速率的方法。侧面泄漏曲线用于导出扩散系数。在各种气候下执行测量可提供与TFE堆栈的性能量化相关的加速因子。提出了卷对卷(R2R)工艺中产生的非结构化TFE堆叠性能的限制因素。对于小型OLED器件,侧面泄漏会大大降低保质期,但对于较大的设备,TFE堆叠的渗透性能决定了保质期。

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