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Organic field-effect transistor gas sensor based on GO/PMMA hybrid dielectric for the enhancement of sensitivity and selectivity to ammonia

机译:基于GO / PMMA混合电介质的有机场效应晶体管气体传感器,用于提高对氨的敏感性和选择性

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摘要

Organic field-effect transistor (OFET) based ammonia gas sensors were fabricated by incorporating a simple solution processed hybrid dielectric, which consisting of poly(methyl methacrylate) (PMMA) and Graphene Oxide (GO) sheets. By carefully optimizing the proportion of GO sheets in the dielectric, a remarkable improvement of sensing performance was obtained when exposed to various NH3 concentrations. Compared with those with pure PMMA dielectric, the sensitivity of OFET sensors with hybrid dielectric had two orders of magnitude enhancement from 1.4% to 30%. The GO/PMMA hybrid dielectric based OFET also shows good selectivity for NH3 against H2S, SO2, and NO2. By analyzing the hybrid dielectric and the 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) film through utilizing fourier transform infrared spectroscopy, X-ray diffraction and atomic force microscope, the enhanced sensing performance was attributed to the preferable interaction between functional groups on GO sheets and NH(3 )gas molecules. The improved sensing performance by the combination of GO and PMMA also suggests the possibility of proper dielectric functionality engineering for the further fabrication of OFET based gas sensors with high performance.
机译:基于有机场效应晶体管(OFET)的氨气传感器是通过并入一种简单的溶液处理混合电介质制成的,该介质由聚甲基丙烯酸甲酯(PMMA)和氧化石墨烯(GO)片组成。通过仔细优化电介质中GO片的比例,当暴露于各种NH3浓度时,可以显着提高传感性能。与纯PMMA电介质相比,混合电介质的OFET传感器的灵敏度从1.4%提高到30%两个数量级。基于GO / PMMA混合电介质的OFET还显示出对NH3对抗H2S,SO2和NO2的良好选择性。通过利用傅立叶变换红外光谱,X射线衍射和原子力显微镜分析混合电介质和6,13-​​双(三异丙基甲硅烷基乙炔基)并五苯(TIPS-并五苯)薄膜,增强的传感性能归因于功能性分子之间的较好相互作用GO薄层上的基团和NH(3)气体分子。 GO和PMMA的组合改善的感测性能还暗示了适当的介电功能工程的可能性,以进一步制造具有高性能的基于OFET的气体传感器。

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  • 来源
    《Organic Electronics》 |2019年第4期|247-252|共6页
  • 作者单位

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China|Johns Hopkins Univ, Dept Mat Sci & Engn, Whiting Sch Engn, 3400 North Charles St, Baltimore, MD 21218 USA;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Optoelect Informat, Chengdu 610054, Sichuan, Peoples R China;

    Johns Hopkins Univ, Dept Mat Sci & Engn, Whiting Sch Engn, 3400 North Charles St, Baltimore, MD 21218 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Organic field-effect transistor (OFET); Graphene oxide; Ammonia gas sensor; Hybrid dielectric; High sensitivity;

    机译:有机场效应晶体管(OFET);氧化石墨烯;氨气传感器;混合电介质;高灵敏度;

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