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首页> 外文期刊>Organic & biomolecular chemistry >Rhodium(i)-catalyzed 1,4-conjugate arylation toward β-fluoroalkylated electron-deficient alkenes: a new entry to a construction of a tertiary carbon center possessing a fluoroalkyl group
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Rhodium(i)-catalyzed 1,4-conjugate arylation toward β-fluoroalkylated electron-deficient alkenes: a new entry to a construction of a tertiary carbon center possessing a fluoroalkyl group

机译:铑(i)催化的1,4-共轭芳基化制得β-氟代烷基化的缺电子烯烃:具有氟代烷基基团的叔碳中心构建的新进入

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摘要

Treatment of β-fluoroalkylated-α,β-unsaturated ketones with 1.2 equiv. of various arylboronic adds in the presence of 5 mol% of [Rh(COD)_2]BF_4 and 6 mol% of (S)-BINAP in toluene/H_2O (v/v = 4/1) at the reflux temperature for 3 h gave the corresponding Michael adducts in high yields with over 90% enantioselec-tivity. Though other electron-deficient alkenes, such as vinylsulfone and vinylphosphonate, were found to be much less reactive in the rhodium-catalyzed conjugate addition with arylboronic acids, the reaction of various arylstannanes toward such electron-deficient alkenes took place very smoothly to afford the corresponding adducts in high yields.
机译:用1.2当量处理β-氟烷基化-α,β-不饱和酮在甲苯/ H_2O(v / v = 4/1)中,在回流温度下,在5 mol%[Rh(COD)_2] BF_4和6 mol%(S)-BINAP存在下,加入3种芳基硼酸酯以高收率得到对映体的90%以上的迈克尔加合物。尽管发现其他电子不足的烯烃,如乙烯基砜和乙烯基膦酸酯,在铑催化的芳基硼酸共轭加成反应中反应性低得多,但各种芳基锡烷向此类电子不足的烯烃的反应非常顺利,从而得到相应的加合物的收率很高。

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  • 来源
    《Organic & biomolecular chemistry》 |2013年第4期|586-595|共10页
  • 作者单位

    Functional Materials Research Laboratories Research & Development Headquarters,Lion Corporation, 7-2-1 Hirai, Edogawa-ku, Tokyo 132-0035, Japan;

    Department of Chemistry and Materials Technology, Kyoto Institute of Technology,Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan;

    Department of Chemistry and Materials Technology, Kyoto Institute of Technology,Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan;

    Department of Chemistry and Materials Technology, Kyoto Institute of Technology,Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan;

    Department of Chemistry and Materials Technology, Kyoto Institute of Technology,Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan;

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