Enhancement of band-edge emission induced by defect transition in the composite of ZnO nanorods and CdSe/ZnS quantum dots

摘要

A new and general approach to enhance band-edge emission at the expense of defect emission in a semicon-nductor nanocomposite is proposed. The underlying mechanism is based on the resonance effect between de-nfect transition and band-to-band excitation and transfer of excited electrons between conduction band edges.nWith our approach, it is possible to convert defect loss into bandgap emission. As an example, we demon-nstrate that the bandgap emission of ZnO nanorods can be enhanced by as much as 30 times when they arencompounded with CdSe/ZnS nanoparticles. © 2008 Optical Society of America