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Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

机译:紫外区半导体有机光子晶体中的光子带隙研究

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We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.
机译:我们对一周期的AlN / 3-辛基噻吩(P3OT)双层一维半导体有机光子晶体中的光子带隙进行了理论分析。根据使用传输矩阵法计算出的反射率研究带隙。结果表明,在紫外区域,存在一个光子带隙,该带隙在很大程度上取决于横向电磁波和横向电磁波的损耗和入射角。另外,我们发现在三元半导体-金属-有机半导体中,光子带隙可以显着扩大。还说明了不同金属对带隙的影响。

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