Defects creation in the undoped Gd_3(Ga,Al)_5O_(12) single crystals and Ce~(3+) -doped Gd_3(Ga,Al)_5O_(12) single crystals and epitaxial films under irradiation in the Gd~(3+) - related absorption bands

摘要

For the first time, an effective photostimulated creation of defects is observed under selective irradiation of the undoped Gd3Ga3Al2O12 single crystal and the Ce - doped Gd-3(Ga,Al)(5)O-12 single crystal and epitaxial film in the Gd3+ - related S-8(7/2) - I-6(J) and S-8(7/2) - P-6(J) absorption bands. Defects creation processes are investigated by the thermally stimulated luminescence (TSL) method in the 4.2-500 K temperature range. The dependences of the TSL glow curve peak intensity on the irradiation photon energy, irradiation temperature, and irradiation duration are measured and analyzed. The activation energy of the TSL glow curve peaks creation is found to be about 0.02 eV. Possible mechanisms of defects creation under irradiation in the absorption bands of Gd3+ in Gd3Ga3Al2O12 and Gd-3(Ga,Al)(5)O-12:Ce are discussed.